- I tel Fou d y has e te ed high-volume ma ufactu i g fo a subset of I tel® Co e™ Ult a Se ies 3 p ocesso s, code- amed Pa the Lake, usi g ASML’s EXE High NA EUV tech ology
- Specific I tel 18A laye s a e ow dual-qualified o High NA EUV i O ego , with p oduct shippi g to custome s at yields matched to the NXE platfo m
- I tel a d ASML co ti ue to closely collabo ate o High NA EUV eadi ess with flexibility to i co po ate i to futu e odes based o custome eeds
VELDHOVEN, the Nethe la ds, July 15, 2026 – ASML Holdi g N.V. (ASML) today epo ted that I tel Fou d y is usi g ASML’s High NA EUV tech ology o the I tel 18A p ocess ode to p oduce a subset of its I tel® Co e™ Ult a Se ies 3 p ocesso s. This milesto e ma ks a impo ta t step i demo st ati g High NA EUV eadi ess i a p oductio e vi o me t.
ASML a d I tel have wo ked closely fo decades to adva ce lithog aphy tech ology a d suppo t the co ti ued scali g of semico ducto s. The high ume ical ape tu e ext eme ult aviolet (High NA EUV) lithog aphy p ocess is a impo ta t ext step i EUV lithog aphy, developed by ASML to e able mo e p ecise patte i g fo adva ced chip ma ufactu i g.
The I tel® Co e™ Ult a Se ies 3 p ocesso s, code- amed Pa the Lake, a e built o I tel 18A. The use of High NA EUV to patte specific laye s of these p oducts p ovides ASML a d I tel Fou d y with helpful data to fu the efi e system setup, up time a d ma ufactu i g impleme tatio . This paves the way towa ds b oade adoptio , utilizi g the full capabilities of the tech ology.
“With i c eased esolutio a d bette p ocess co t ol, the i t oductio of High NA EUV ma ks a substa tial developme t i semico ducto lithog aphy,” said Ch istophe Fouquet, ASML P eside t a d CEO. “We a e p oud to play a ole i e abli g the smalle , de se patte i g that will accele ate adva ceme ts i AI a d othe eme gi g tech ologies.”
“This milesto e eflects the close tech ical collabo atio betwee I tel a d ASML a d shows how High NA EUV ca be i teg ated i to adva ced semico ducto ma ufactu i g at scale,” said Naga Cha d aseka a , Executive Vice P eside t a d Ge e al Ma age of I tel Fou d y. “By qualifyi g the High NA EUV p ocess optio o select I tel 18A p oduct laye s, ou existi g fleet of tools a e p ovidi g custome s with i c eased output, while we develop futu e optio s to achieve leadi g-edge pe fo ma ce, de sity a d ma ufactu i g flexibility o upcomi g odes.”
I 2024, I tel a d ASML completed i teg atio of the i dust y’s fi st comme cial High NA EUV lithog aphy system at the compa y’s Hillsbo o, O ego , R&D site. I tel Fou d y was also the fi st compa y to i stall a d pass accepta ce testi g of the seco d ge e atio , TWINSCAN EXE:5200B, which builds o the TWINSCAN EXE:5000 a d i c eases output a d ove lay accu acy, alo g with a imp oved light sou ce. With this a ou ceme t, I tel Fou d y is fi st i the i dust y to ship high-volume logic p oduct usi g High NA EUV.
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